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| Preliminary data BSP 316 P SIPMOS Small-Signal-Transistor Feature * P-Channel * Enhancement mode * Logic Level * dv/dt rated Product Summary VDS R DS(on) ID -100 1.8 -0.68 P-SOT223-4-1 Drain pin 2/4 Gate pin1 Source pin 3 V A Type Package BSP 316 P P-SOT223-4-1 Ordering Code Q67042-S4165 Tape and Reel Information - Marking BSP316P Maximum Ratings, at Tj = 25 C, unless otherwise specified Parameter Continuous drain current TA=25C TA=70C Symbol ID Value -0.68 -0.54 Unit A Pulsed drain current TA=25C ID puls dv/dt VGS Ptot Tj , Tstg -2.72 6 20 1.8 -55... +150 55/150/56 kV/s V W C Reverse diode dv/dt IS =-0.68A, VDS =-48V, di/dt=-200A/s, Tjmax=150C Gate source voltage Power dissipation TA=25C Operating and storage temperature IEC climatic category; DIN IEC 68-1 Page 1 2002-07-24 Preliminary data Thermal Characteristics Parameter Characteristics Symbol min. Values typ. BSP 316 P Unit max. Thermal resistance, junction - soldering point (Pin 4) SMD version, device on PCB: @ min. footprint @ 6 cm 2 cooling area 1) RthJS RthJA - 15 25 K/W - 80 48 115 70 Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Static Characteristics Drain-source breakdown voltage VGS =0, ID=-250A Symbol min. V(BR)DSS VGS(th) IDSS IGSS RDS(on) RDS(on) -100 -1 Values typ. -1.5 max. -2 Unit V Gate threshold voltage, VGS = VDS ID =-170A Zero gate voltage drain current VDS =-100V, VGS =0, Tj =25C VDS =-100V, VGS =0, Tj =150C A -0.1 -10 -10 1.5 1.4 -0.2 -100 -100 2.3 1.8 nA Gate-source leakage current VGS =-20V, VDS =0 Drain-source on-state resistance VGS =-4.5V, ID =-0.61A Drain-source on-state resistance VGS =-10V, ID =-0.68A 1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm (one layer, 70 m thick) copper area for drain connection. PCB is vertical without blown air. Page 2 2002-07-24 Preliminary data BSP 316 P Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Dynamic Characteristics Transconductance Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Qgs Qgd Qg VDD =-80V, ID =-0.68A, VGS =0 to -10V VDD =-80V, ID =-0.68A Symbol Conditions min. Values typ. 1 117 27.7 12 4.7 7.5 67.4 25.9 max. 146 34.5 15 7 11.2 101 38.9 Unit gfs Ciss Coss Crss td(on) tr td(off) tf |VDS|2*|ID |*RDS(on)max , ID =-0.54A VGS =0, VDS =-25V, f=1MHz 0.5 - S pF VDD =-50V, VGS=-10V, ID =-0.68A, RG =6 ns - -0.2 -1.87 -5.1 -2.7 -0.3 -2.8 -6.4 - nC V(plateau) VDD =-80V, ID =-0.68A V Reverse Diode Inverse diode continuous forward current Inv. diode direct current, pulsed ISM Inverse diode forward voltage VSD Reverse recovery time trr Reverse recovery charge Qrr VGS =0, IF =-0.68A VR =-50V, IF =lS , diF /dt=100A/s IS TA=25C - -0.85 44.2 56.3 -0.68 A -2.72 -1.2 55.3 70.4 V ns nC Page 3 2002-07-24 Preliminary data BSP 316 P 1 Power dissipation Ptot = f (TA ) 1.9 BSP 316 P 2 Drain current ID = f (TA ) parameter: |VGS | 10V BSP 316 P -0.75 W 1.6 A -0.6 1.4 -0.55 Ptot ID 20 40 60 80 100 120 1.2 1 0.8 0.6 0.4 0.2 0 0 -0.5 -0.45 -0.4 -0.35 -0.3 -0.25 -0.2 -0.15 -0.1 -0.05 C 160 0 0 20 40 60 80 100 120 C 160 TA TA 3 Safe operating area ID = f ( VDS ) parameter : D = 0 , TA = 25C -10 1 BSP 316 P 4 Transient thermal impedance ZthJA = f (tp ) parameter : D = tp /T 10 2 BSP 316 P K/W A tp = 250.0s 10 1 D -10 0 1 ms DS =V Z thJA 10 0 D = 0.50 0.20 ID /I -10 -1 R DS (on 10 ms ) 0.10 10 -1 single pulse 0.05 0.02 0.01 DC -10 -2 -10 -1 -10 0 -10 1 -10 2 V -10 3 10 -2 -5 -4 -3 -2 -1 0 1 2 10 10 10 10 10 10 10 10 s 10 4 VDS Page 4 tp 2002-07-24 Preliminary data BSP 316 P 5 Typ. output characteristic ID = f (VDS ) parameter: Tj =25C, -VGS 2.4 6 Typ. drain-source on resistance RDS(on) = f (ID ) parameter: Tj =25C, -VGS 7 RDS(on) -I D A 10V 5V 4.4V 2 3.6V 3.2V 1.8 2.8V 1.6 2.4V 2.2V 1.4 1.2 1 0.8 5 2.2V 2.4V 2.8V 3.2V 3.6V 4.4V 5V 10V 4 3 2 0.6 0.4 0.2 0 0 0.5 1 1.5 2 2.5 3 3.5 4 1 V5 -VDS 0 0 0.4 0.8 1.2 1.6 A 2.4 -ID 7 Typ. transfer characteristics ID= f ( VGS ); |VDS| 2 x |ID | x RDS(on)max parameter: Tj = 25 C 3.5 8 Typ. forward transconductance gfs = f(ID) parameter: Tj =25C 1.8 A S 2.5 -I D 2 0.9 1.5 0.6 1 g fs 0.5 0 0 0.5 1 1.5 2 2.5 3 3.5 4.5 1.2 0.3 V 0 0 0.4 0.8 1.2 1.6 2 2.4 A 3.2 -VGS Page 5 -ID 2002-07-24 Preliminary data BSP 316 P 9 Drain-source on-state resistance RDS(on) = f (Tj ) parameter : ID = -0.68 A, VGS = -10 V 5 BSP 316 P 10 Typ. gate threshold voltage VGS(th) = f (Tj) parameter: VGS = VDS 2.4 4 V 98% 2 RDS(on) 3.5 3 2.5 2 1.5 1 98% VGS(th) 1.8 1.6 1.4 1.2 1 0.8 2% typ. typ 0.6 0.4 0.5 0 -60 0.2 -20 20 60 100 C 180 0 -60 -20 20 60 100 C 160 Tj Tj 11 Typ. capacitances C = f (VDS) parameter: VGS =0, f=1 MHz, Tj = 25 C 10 3 12 Forward character. of reverse diode IF = f (VSD ) parameter: Tj -10 1 BSP 316 P pF A Ciss 10 2 -10 0 C Coss Crss 10 1 -10 -1 Tj = 25 C typ Tj = 150 C typ Tj = 25 C (98%) Tj = 150 C (98%) 10 0 0 -10 -2 0 IF 4 8 12 16 20 24 28 V 36 -0.4 -0.8 -1.2 -1.6 -2 -2.4 V -3 -VDS Page 6 VSD 2002-07-24 Preliminary data BSP 316 P 13 Typ. gate charge VGS = f (QGate) parameter: ID = -0.68 A pulsed, Tj = 25 C -16 V BSP 316 P 14 Drain-source breakdown voltage V(BR)DSS = f (Tj ) BSP 316 P -120 V -12 V(BR)DSS 0.2 VDS max 0.5 VDS max 0.8 VDS max -114 -112 -110 -108 -106 -104 VGS -10 -8 -6 -102 -100 -4 -98 -96 -94 -92 -2 0 0 1 2 3 4 5 6 7 nC 8.5 -90 -60 -20 20 60 100 C 180 |Q G| Tj Page 7 2002-07-24 Preliminary data Published by Infineon Technologies AG, Bereichs Kommunikation St.-Martin-Strasse 53, D-81541 Munchen (c) Infineon Technologies AG 1999 All Rights Reserved. Attention please! The information herein is given to describe certain components and shall not be considered as warranted characteristics. Terms of delivery and rights to technical change reserved. We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. Infineon Technologies is an approved CECC manufacturer. BSP 316 P Information For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list). Warnings Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered. Page 8 2002-07-24 |
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